advanced power asymmetric dual n-channel electronics corp. enhancement mode power mosfet simple drive requirement ch-1 bv dss 30v easy for dc/dc buck r ds(on) 8.2m converter application ch-2 bv dss 30v rohs compliant & halogen-free r ds(on) 2.4m description absolute maximum ratings@ t j =25 o c(unless otherwise specified) symbol parameter units ch-2 v ds drain-source voltage 30 v v gs gate-source voltage +20 / -12 v i d @t c =25 drain current (silicon limited) 100 a i d @t a =25 drain current 3 , v gs @ 10v 24.3 a i d @t a =70 drain current 3 , v gs @ 10v 19.4 a i dm pulsed drain current 1 75 a p d @t a =25 total power dissipation 3 2.27 w t stg storage temperature range t j operating junction temperature range ch-2 rthj-c 3 /w rthj-a 55 /w rthj-a 120 /w -55 to 150 2.08 40 30 maximum thermal resistance, junction-ambient 3 5 60 130 thermal data 201803021 symbol ch-1 rating units parameter 1 maximum thermal resistance, junction-case maximum thermal resistance, junction-ambient 4 -55 to 150 +20 / -12 ap3D2R6Cmt 42 12.2 9.8 rating ch-1 halogen-free product a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and cost-effectiveness. g1 d2/s1 d1 d1 pmpak ? 5x6 g2 d2/s1 d2/s1 d2/s1 the control mosfet (ch-1) and synchronous mosfet (ch-2) co-package for synchronous buck converters. the package provide optimal efficiency with low stray inductance and very low on- resistance. g1 d2/s1 d1 d1 g2 d2/s1 s2 d1 pmpak 5x6 g1 g2 d1 d2/s1 s2 .
ch-1 electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =14a - - 8.2 m ? v gs =4.5v, i d =7a - - 13 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 2.5 v g fs forward transconductance v ds =5v, i d =14a - 33 - s i dss drain-source leakage current v ds =24v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+20v, v ds =0v - - 100 na q g total gate charge i d =7a - 7 11.2 nc q gs gate-source charge v ds =15v - 4 - nc q gd gate-drain ("miller") charge v gs =4.5v - 1 - nc t d(on) turn-on delay time v ds =15v - 9 - ns t r i d =14a - 48 - ns t d(off) turn-off delay time r g =3 -17- ns t f fall time v gs =10v - 2 - ns c iss input capacitance v gs =0v - 1200 1920 pf c oss output capacitance v ds =15v - 270 - pf c rss reverse transfer capacitance f=1.0mhz - 10 - pf r g gate resistance f=1.0mhz - 1 2 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =14a, v gs =0v - - 1.2 v t rr reverse recovery time i s =14a, v gs =0v - 17 - ns q rr reverse recovery charge di/dt=100a/s - 9 - nc 2 ap3D2R6Cmt .
ap3D2R6Cmt ch-2 electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =20a - - 2.4 m v gs =4.5v, i d =12a - - 3 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1.1 - 2.5 v g fs forward transconductance v ds =5v, i d =20a - 86 - s i dss drain-source leakage current v ds =24v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+20v, v ds =0v - - 100 na q g total gate charge i d =12a - 30 48 nc q gs gate-source charge v ds =15v - 11 - nc q gd gate-drain ("miller") charge v gs =4.5v - 6.5 - nc t d(on) turn-on delay time v ds =15v - 11 - ns t r rise time i d =20a - 64 - ns t d(off) turn-off delay time r g =3 -50- ns t f fall time v gs =10v - 14 - ns c iss input capacitance v gs =0v - 4300 6880 pf c oss output capacitance v ds =15v - 1050 - pf c rss reverse transfer capacitance f=1.0mhz - 34 - pf r g gate resistance f=1.0mhz - 1.7 3.4 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =20a, v gs =0v - - 1.2 v t rr reverse recovery time i s =20a, v gs =0v - 35 - ns q rr reverse recovery charge di/dt=100a/s - 29 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board, on steady-state 4.surface mounted on min. copper pad of fr4 board, on steady-state this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 3 .
ap3D2R6Cm t channel-1 fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 4 0 10 20 30 0 0.4 0.8 1.2 1.6 2 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0 10 20 30 40 0 0.4 0.8 1.2 1.6 2 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =14a v g =10v 0 2 4 6 8 10 12 14 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 6 8 10 12 14 16 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =7a t a =25 o c 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) i d = 250ua .
ap3D2R6Cm t channel-1 fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. drain current v.s. ambient temperature 5 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds ,drain-to-source voltage (v) i d (a) t a =25 o c s in g le puls e 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = pdm x r thja + t a r thja =130 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 2 4 6 8 0 4 8 12 16 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =7a v ds =15v 0 400 800 1200 1600 2000 1 5 9 13172125293337 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss operation in this area limited by r ds(on) 0 10 20 30 40 50 60 0123456 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v t j = -55 o c 0 4 8 12 16 20 25 50 75 100 125 150 t a , ambient temperature ( o c ) i d , drain current (a) .
ap3D2R6Cm t channel-2 fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 6 0 20 40 60 80 0 0.4 0.8 1.2 1.6 2 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0 20 40 60 80 0 0.4 0.8 1.2 1.6 2 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 t j , junction temperature (oc) normalized r ds(on) i d =20a v g =10v 0 4 8 12 16 20 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 1 1.4 1.8 2.2 2.6 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =12a t a =25 o c 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) i d = 250ua .
ap3D2R6Cm t channel-2 fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. drain current v.s. ambient temperature 7 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds ,drain-to-source voltage (v) i d (a) t a =25 o c s in g le puls e 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = pdm x r thja + t a r thja =120 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 2 4 6 8 0 102030405060 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =12a v ds =15v 0 2000 4000 6000 8000 1 5 9 13 17 21 25 29 33 37 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss operation in this area limited by r ds(on) 0 20 40 60 80 100 0123456 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v t j = -55 o c 0 6 12 18 24 30 25 50 75 100 125 150 t a , ambient temperature ( o c ) i d , drain current (a) .
ap3D2R6Cmt marking information 8 date code (ywwsss) y last digit of the year ww week sss sequence part numbe r 3D2R6C ywwsss .
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